AlN film deposition as a semiconductor device
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- Título: AlN film deposition as a semiconductor device
- Autor: Pérez Taborda, Jaime Andrés; Aperador, W; Caicedo, J. C
- Publicación original: Ingeniería e Investigación; Vol. 33, No. 2, 2013
- Descripción física: PDF
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Nota general:
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AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (?= 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99%) target.
The films were deposited using 7 J/cm2 laser fluence for 10 minutes on silicon (100) substrates. The working pressure was 9x10-3 mbar and the substrate temperature was varied from 200 C to 630 C. The thickness measured by profilometer was 150 nm for all films. Moreover, surface acoustic wave (SAW).
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AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (?= 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99%) target.
- Notas de reproducción original: Digitalización realizada por la Biblioteca Virtual del Banco de la República (Colombia)
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Notas:
- Resumen: Aluminum nitride; Color purity frequency response; Optical reflectance; Pulsed laser deposition; Surface acoustic wave
- © Derechos reservados del autor
- Colfuturo
- Forma/género: texto
- Idioma: inglés
- Institución origen: Biblioteca Virtual del Banco de la República
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